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PD - 94366C
IRF6601
l l l l l l l
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with exisiting Surface Mount Techniques
DirectFETTM Power MOSFET VDSS
20V
RDS(on) max
3.8m@VGS = 10V 5.0m@VGS = 4.5V
ID
26A 21A
DirectFET ISOMETRIC
Description
The IRF6601 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C PD @TC = 25C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 85 26 20 200 3.6 2.3 42 28 20 -55 to + 150
Units
V
A W
mW/C V C
Thermal Resistance
Symbol
RJA RJA RJA RJC RJ-PCB
Parameter
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB mounted
Typ.
--- --- --- --- ---
Max.
35 12.5 20 3.0 1.0
Units
C/W
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3/25/02
IRF6601
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.019 --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 100A --- V/C Reference to 25C, ID = 1mA 3.8 VGS = 10V, ID = 26A m 5.0 VGS = 4.5V, ID = 21A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 20 V nA -100 VGS = -20 V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Cont FET Gate-to-Source Charge Gate to Drain ("Miller")Charge Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 50 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 36 11 12 48 16 140 33 110 3440 2430 380 Max. Units Conditions --- S VDS = 10 V, ID = 21 A 54 ID = 21A --- nC VDS = 16 V --- VGS = 4.5 V, --- VDS = 0 V, VGS = 16V --- VDD = 15 V --- ns ID = 21 A --- RG = 5.1 --- VGS = 4.5 V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
65 21
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.83 0.68 60 94 62 88 26 A 200 1.2 --- 90 140 93 130 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 21A, VGS = 0V TJ = 125C, IS = 21A, VGS = 0V TJ = 25C, IF = 21A, VR=15 V di/dt = 100A/s TJ = 125C, IF = 21A, VR=15 V di/dt = 100A/s
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IRF6601
1000
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
100
2.7V
2.7V
20s PULSE WIDTH Tj = 25C
10 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
10 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I D = 26A
ID, Drain-to-Source Current ()
T J = 25C T J = 150C
RDS(on) , Drain-to-Source On Resistance
1.5
100
(Normalized)
1.0
0.5
10 2.5 3.0
VDS = 15V 20s PULSE WIDTH
3.5 4.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ, Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF6601
6000
5000
V GS C iss C rss C oss
= = = =
0V, f = 1MHz C gs + C gd , C ds SHORTED C gd C ds + C gd
12
I D = 21A
VDS = 16V VDS = 10V VDS = 4V
10
4000
VGS , Gate-to-Source Voltage (V)
100
C, Capacitance (pF)
8
Ciss
3000
6
Coss
2000
4
1000
2
Crss
0 1 10
0 0 20 40 60 80
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0 T J = 150C 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100sec 10 1msec Tc = 25C Tj = 150C Single Pulse 0 1 10 10msec 100
1
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF6601
30
VDS
25
RD
VGS RG
D.U.T.
+
20
I D , Drain Current (A)
-V DD
15
V GS
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
(Z thJA)
D = 0.50 10 0.20 0.10 0.05
Thermal Response
1
0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T t1 / t 2 +TA 10 100
0.1
J = P DM x Z thJA
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6601
RDS (on) , Drain-to-Source On Resistance ( )
0.006
RDS(on) , Drain-to -Source On Resistance ( )
0.02
VGS = 4.5V 0.005
0.01
0.004
VGS = 10V
ID = 26A
0.003 0 60 120 180 240 ID , Drain Current (A)
0.00 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
160
VG
ID TOP
Charge
VGS
3mA
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
EAS , Single Pulse Avalanche Energy (mJ)
IG
ID
BOTTOM
120
9.4A 17A 21A
80
15V
40
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0 25 50 75 100 125 150
A
I AS
tp
0.01
Starting T , Junction Temperature J
( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
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IRF6601
DirectFET Board Footprint
DirectFET Tape and Reel Dimension
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IRF6601
DirectFET Outline Dimension
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board Used double sided cooling, mounting pad Mounted on minimum footprint full size board with metalized back and with small clip heatsink TC measured with thermal couple mounted to top (Drain) of part. Starting TJ = 25C, L = 0.30mH, RG = 25W, IAS = 21A. (See Figure 14)
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/02
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